Beijing Silk Road Enterprise Management Services Co.,LTD

Integrity management, solidarity and mutual help, innovation and change, pragmatism and efficiency.

Manufacturer from China
Verified Supplier
7 Years
Home / Products / DRAM Memory Chip /

H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

Contact Now
Beijing Silk Road Enterprise Management Services Co.,LTD
Visit Website
Country/Region:china
Contact Now

H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

Ask Latest Price
Video Channel
Model Number :H9HCNNN4KMMLHR
Certification :Original Parts
MOQ :1 package
Price :Negotiation
Payment Terms :T/T, PayPal, Western Union, Escrow and others
Supply Ability :6000pcs per month
Delivery Time :3-5 work days
Packaging Details :10cm X 10cm X 5cm
Item number :H9HCNNN4KMMLHR
Package :BGA200
Org. :X16
Density :4GB
Vol :1.8V-1.1V-0.6V
Speed :L/M
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

DRAM Memory Chip DRAM Memory Chip H9HCNNN4KMMLHR 4Gb LPDDR4 BGA200 Memory Chip Storage

Features:

 VDD1 = 1.8V (1.7V to 1.95V) · VDD2 and VDDCA = 1.1V (1.06V to 1.17V) · VDDQ = 0.6V (0.57V to 0.65V) · VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI) · Single data rate architecture for command and address;   - all control and address latched at rising edge of the clock · Double data rate architecture for data Bus;   - two data accesses per clock cycle · Differential clock inputs (CK_t, CK_c) · Bi-directional differential data strobe (DQS_t, DQS_c)   - Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c) · DMI pin support for write data masking and DBIdc functionality · Programmable RL (Read Latency) and WL (Write Latency) · Burst length: 16 (default), 32 and On-the-fly   - On the fly mode is enabled by MRS · Auto refresh and self refresh supported · All bank auto refresh and directed per bank auto refresh supported · Auto TCSR (Temperature Compensated Self Refresh) · PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask · Background ZQ Calibration 
Product Specifications
Part No.

H9HCNNN4KMMLHR 4Gb  DRAM Memory Chip ,  LPDDR4  BGA200  Computer Ram Chip  Storage

Den.

Org.

Vol

Speed

Power

PKG

Product Status

H9HCNNN4KMMLHR 4Gb x16 1.8V-1.1V-0.6V L / M Low Power 200 Mass production
H9HCNNN4KUMLHR 4Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNN8KUMLHR 8Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNBKMMLHR 16Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNBKUMLHR 16Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production
H9HCNNNBPUMLHR 16Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNCPMMLHR 32Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNCPUMLHR 32Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production

Speed
Part Number Speed
L 3200Mbps
M 3733Mbps

Inquiry Cart 0