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Flash Memory Chip TC58BYG1S3HBAI6 IC FLASH 2G PARALLEL 67VFBGA
he TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BYG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BYG1S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally
| | Description | Value |
|---|---|---|
| | Architecture | Sectored |
| | Block Organization | Symmetrical |
| | Cell Type | SLC NAND |
| | Density | 2 Gb |
| | ECC Support | Yes |
| | Interface Type | Serial |
| | Maximum Operating Supply Voltage | 1.95 V |
| | Minimum Operating Supply Voltage | 1.7 V |
| | Mounting | Surface Mount |
| | Number of Bits per Word | 8 Bit |
| | Number of Words | 256 MWords |
| | Operating Temperature | -40 to 85 °C |
| | Page Size | 2 KB |
| | Pin Count | 67 |
| | Product Dimensions | 8 x 6.5 x 0.74(Max) |
| | Programming Voltage | 1.7 to 1.95 V |
| | Screening Level | Industrial |
| | Sector Size | 128 x 2048 KB |
| | Supplier Package | VFBGA |
| | Timing Type | Synchronous |
| | Typical Operating Supply Voltage | 1.8000 V |
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